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| 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2390 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings 60 20 12 48 12 12 Unit V V A A A A mJ W C C EAR* Tch 3 12 2 Pch* 20 150 -55 to +150 Tstg 2 2SK2390 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 0.11 8 450 240 60 10 55 100 70 1.05 95 Max -- -- 10 250 2.25 0.09 0.15 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 12 A, VGS = 0 IF = 12 A, VGS = 0, diF / dt = 50 A / s Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A 1 VGS = 10 V* ID = 6 A 1 VGS = 4 V* ID = 6 A 1 VDS = 10 V* VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state RDS(on) resistance 3 2SK2390 Power vs. Temperature Derating 40 Pch (W) 200 100 Maximum Safe Operation Area I D (A) 30 50 20 10 5 2 1 0.5 0.2 Ta = 25 C 1 DC 10 10 PW Op s Channel Dissipation Drain Current 20 =1 0m 1m s( 0 s s 10 tio ho Operation in n( t) Tc this area is =2 limited by R DS(on) 5 C) era 1s 0 50 100 150 Tc (C) 200 Case Temperature 2 5 10 20 50 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V 6V 5V Pulse Test 4V (A) 16 20 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 16 12 3.5 V 3V 2.5 V VGS = 2 V ID Drain Current Drain Current 12 8 8 -25C Tc = 75C 25C 2 4 6 Gate to Source Voltage 8 10 V GS (V) 4 4 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 4 2SK2390 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test 1.6 I D = 15 A 1.2 10 A Drain to Source On State Resistance R DS(on) ( ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 VGS = 4 V 0.1 0.05 0.02 0.01 1 2 5 10 20 50 Drain Current I D (A) 100 10 V Drain to Source Voltage 0.8 0.4 5A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.4 I D = 15 A 0.3 V GS = 4 V 0.2 5A 10 A Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 20 10 5 Forward Transfer Admittance vs. Drain Current Tc = -25 C 75 C 25 C 2 1 0.5 0.2 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 0.1 5 A, 10 A, 15 A 0 -40 10 V 0 40 80 120 160 Case Temperature Tc (C) 5 2SK2390 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 Reverse Recovery Time trr (ns) 1000 500 Ciss Coss 200 100 50 20 10 5 0.1 di/dt = 50 A/s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Capacitance C (pF) 200 100 50 Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50 20 10 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 20 500 Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) Drain to Source Voltage Gate to Source Voltage 80 V DD = 10 V 25 V 50 V 60 VDS 40 16 VGS Switching Time t (ns) 200 100 12 tf 50 tr 20 10 5 0.2 t d(on) I D = 15 A 8 20 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 0 0.5 1 2 Drain Current 5 10 I D (A) 20 6 2SK2390 Reverse Drain Current vs. Souece to Drain Voltage Pulse Test Reverse Drain Current I DR (A) Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 20 20 I AP = 12 A V DD = 25 V duty < 0.1 % Rg > 50 16 16 12 10 V 8 5V V GS = 0, -5 V 12 8 4 4 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (C) Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 2SK2390 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 e 1 uls 0.0 tp ho 1s ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C PDM PW T 0.03 D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2390 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 9 |
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